Starting Time：2015-10-30 08:30:00
Ending Time：2015-10-30 12:20:00
Location：Meeting Room NO.7101A
Introduction： Graphene, an excellent performance semiconductor material, possesses higher carrier mobility than silicon. It is expected to become the basic materials for next generation of ultra-high frequency transistor, which is widely used in high performance integrated circuits and new nano electronic devices. This session will focus on the research progress on single-crystal graphene films applied in high-frequency electronic devices and future research direction.
Schedule
8:30 Meeting Room NO.7101A 7101A会议室 | |
Symposium A02: High-Frequency Electrics 分会场A02：石墨烯在高频电子领域的应用 Session Co-chairs: Jin Zhi, Institute of Microelectronics, Chinese Academy of Sciences, China; Klaus Ensslin, ETH Zürich, Switzerland 分会中方主席：金智，中国科学院微电子研究所（中国）；外方主席：Klaus Ensslin，苏黎世联邦理工学院（瑞士） | |
8:30-8:55 | FRI1.101: Electron Transport through Graphene Quantum Structure 石墨烯量子结构中的电子输运 Klaus Ensslin, ETH Zürich, Switzerland Klaus Ensslin，苏黎世联邦理工学院（瑞士） |
8:55-9:20 | FRI1.102: Quasi-Free-Standing Bilayer Epitaxial Graphene and Its Transistors 双层准自由态外延石墨烯和晶体管 Zhihong Feng, Hebei Semiconductor Research Institute (HSRI), China 冯志红，河北半导体研究所（中国） |
9:20-9:45 | FRI1.103: Radiofrequency-Operated Graphene Biochemical Sensors 基于射频的石墨烯生物化学传感器 Wangyang Fu, Leiden University, Netherlands Wangyang Fu，莱顿大学（荷兰） |
9:45-10:10 | FRI1.104: Graphene and Graphene Heterostructure for RF Applications石墨烯及石墨烯异质结构在射频领域的应用 Jeong-Sun Moon, HRL Labs LLC, USA Jeong-Sun Moon，美国休斯实验室（美国） |
10:10-10:40 | Coffee Break 茶歇 |
10:40-11:05 | FRI1.105: Investigation of Graphene Field-Effect Transistors 石墨烯场效应晶体管研究 Zhi Jin, Institute of Microelectronics, Chinese Academy of Sciences, China 金智，中国科学院微电子研究所（中国） |
11:05-11:30 | FRI1.106: RF Graphene Device-Circuit Co-design 射频石墨烯器件电路协同设计 Eduard Alarcon, Technical University of Catalunya (UPC), Spain Eduard Alarcon，加泰罗尼亚理工大学（西班牙） |
11:30-11:45 | FRI1.107: (Oral) 2D Inserted Metal/Si: An Attractive Option for Si MOSFET Contact 二维材料嵌入金属/Si界面：一种极具潜力的Si金属氧化物半导体场效应晶体管触点 Min-Hyun Lee, Samsung Advanced Institute of Technology (SAIT), Korea Min-Hyun Lee，韩国三星尖端技术研究所（韩国） |
11:45-12:00 | FRI1.108: (Oral) Graphene /Quantum Dot Electric Field Phototransisitors 石墨烯/量子点电场光电晶体管 Yating Zhang,Tianjin University, China 张雅婷，天津大学（中国） |
12:00-12:20 | Discussion 交流讨论 |
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E-mail: meeting@c-gia.org
Abstract: Minyang Lu
Sponsor: Wenyang Yang
Media: Liping Wang
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