凯发

High Frequency Electronics

THEME:High Frequency Electronics

Starting Time:2016-09-24 09:00:00

Ending Time:2016-09-24 12:20:00

Location:Conference Room 5701

Introduction:

Session Chair: Zhi Jin, Institute of Microelectronics, CAS, China


Graphene, an excellent performance semiconductor material, possesses higher carrier mobility than silicon. It is expected to become the basic materials for next generation of ultra-high frequency transistor, which iswidely used in high performance integrated circuits and new nano electronic devices. This session will focus on the research progress on single-crystal graphene films applied in high-frequency electronic devices and future research direction.

Schedule

09:00-09:25 Mindaugas Lukosius, Brandenburg University, Germany

09:25-09:50 Yun Wu, Nanjing Electronic Device Institute, China

09:50-10:05 Xianjun Huang, University of Manchester, UK

10:05-10:35 Coffee Break

10:35-11:00 Zhi Jin, Institute of Microelectronics, CAS, China

11:00-11:25 Eduard Alarcon, Technical University of Catalunya (UPC), Spa

11:25-12:00 Discussion


Main Organizer

CGIA supports members to focus on application and industry chain, to keep pace with market development, to guarantee industry interests by involving in policy making and establishing standards, and to build long-term cooperation with up-down stream enterprises all over the world.

Contact
+86-18657108128
+86-10-62771936

E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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