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Speaker-Yang Xu

Yang Xu
School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China
Biography:

Prof. Yang Xu is an IEEE NTC Distinguished Lecturer (2022 & 2023), Fellow of the Institute of Physics (FInstP), Fellow of the Royal Society of Chemistry (FRSC), Fellow of the Institute of Materials, Minerals and Mining (FIMMM), and IEEE EDS Senior Member. He is an editorial board member of IOP Nanotechnology and Associate Editor of IEEE T-ED, Photonics Research and Microelectronics Journal. He received his B.S. degree in Institute of Microelectronics at department of EE from Tsinghua University, M.S. and Ph.D. degrees in ECE from the University of Illinois Urbana-Champaign (UIUC), USA. He is a full professor and was served as Assistant Dean at the School of Micro-Nano Electronics, Zhejiang University, China. He was also a visiting-by-Fellow of Churchill College at the University of Cambridge, UK, and a visiting professor at the University of California Los Angles (UCLA). He has published more than 150 papers including Nature Electronics, Nature Nanotechnology, Nature Photonics, Chemical Reviews, and IEDM, etc. He authored one Wiley book titled as《Graphene for Post-Moore Silicon Optoelectronics》. He holds over 30 granted patents and gave more than 50 talks in international conferences. He also served as TPC of IEEE-EDTM and IEEE-IPFA conferences, and is technical committee member of IEEE EDS optoelectronic devices and IEEE NTC nanoelectronics (TC6). His current research interests include emerging 2D/3D integrated nano-devices and image sensors for Internet-of-Everything and Post-Moore Ubiquitous Electronics.
Title:Graphene/Silicon Heterostructures for Integrated Nanotechnology
Symposium
Starting Time
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Abstract

Abstract:


Two-dimensional (2D) materials and their heterostructures represent a rapidly expanding class of materials, offering exciting features in exponentially growing areas of physics, and engineering. Low-power consumption, high operating speeds, and efficient energy conversion are the primary requirements for the next-generation electronic and optoelectronic devices, where 2D materials made their mark as the potential materials to resolve the limitations of silicon electronics. Developing device schemes by integrating graphene and 3D (bulk) materials enables us to continue the benefits of matured Si-based technology, while exploiting the novel features of low-dimensional materials. The DL lecture aims to provide a comprehensive understanding of the role of 2D-3D hybrid systems in emerging applications with functionalities superior to those of individual materials. This lecture also discusses how the intrinsic charge generation and transport features of 2D heterostructures can be integrated with Si technology to overcome the existing technological limitations and develop unique electronic and optoelectronic devices. The challenges and opportunities regarding the back-end-of-line and front-end-of-line integration of graphene with Si CMOS technologies will be discussed. Recent developments of graphene/Si heterojunction devices will also be presented. These devices, combining the benefits of graphene and Si, demonstrate their potential applications for post-Moore’s nanotechnology.

Main Organizer

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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