Abstract:
Two-dimensional (2D) materials and their heterostructures represent a rapidly expanding class of materials, offering exciting features in exponentially growing areas of physics, and engineering. Low-power consumption, high operating speeds, and efficient energy conversion are the primary requirements for the next-generation electronic and optoelectronic devices, where 2D materials made their mark as the potential materials to resolve the limitations of silicon electronics. Developing device schemes by integrating graphene and 3D (bulk) materials enables us to continue the benefits of matured Si-based technology, while exploiting the novel features of low-dimensional materials. The DL lecture aims to provide a comprehensive understanding of the role of 2D-3D hybrid systems in emerging applications with functionalities superior to those of individual materials. This lecture also discusses how the intrinsic charge generation and transport features of 2D heterostructures can be integrated with Si technology to overcome the existing technological limitations and develop unique electronic and optoelectronic devices. The challenges and opportunities regarding the back-end-of-line and front-end-of-line integration of graphene with Si CMOS technologies will be discussed. Recent developments of graphene/Si heterojunction devices will also be presented. These devices, combining the benefits of graphene and Si, demonstrate their potential applications for post-Moore’s nanotechnology.
CGIA supports members to focus on application and industry chain, to keep pace with market development, to guarantee industry interests by involving in policy making and establishing standards, and to build long-term cooperation with up-down stream enterprises all over the world.
E-mail: meeting@c-gia.org
Abstract: Minyang Lu
Sponsor: Wenyang Yang
Media: Liping Wang
Operated by:China Innovation Alliance of the Graphene Industry