凯发

Speaker-Xuesong Li

Xuesong Li
professor of University of Electronic Science and Technology

Dr. Xuesong Li is the professor of University of Electronic Science and Technology of China. He is awarded as the highly cited researcher 2019 by Clarivate. He is the inventor of the method of graphene synthesis on Cu by chemical vapor deposition. He got his B.S. and M.S. from Tsinghua University and his Ph.D. from Rensselaer Polytechnic Institute in US. Then Dr. Li pursued his post doctorate research in UT Austin and IBM T. J. Watson Research Center, respectively, and as an associate research scientist in Yale University. Dr. Li’s research interests are synthesis and applications of 2D graphene films and graphene related 2D heterostructures. He has published over 80 papers in peer reviewed journals such as Science, Nature Nanotechnology, Nature Materials, Nature Photonics, etc. with total citations over 31000. His research work has been widely reported by multi-media such as BBC news, Nature, ScienceDaily, C&EN, etc.  His work on graphene synthesis by chemical vapor deposition of methane on copper foil substrate, which was published in Science in 2009, was selected as one of the breakthroughs in 2009 by Science and has been cited over 10000 times. This invention has been widely used in both academy and industry up to date for graphene film production.

Title：synthesis and transfer of graphene films towards industrial production
Symposium
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Abstract

The technology of preparing graphene thin films by chemical vapor deposition based on copper substrate has been widely used in academic research and industrial preparation. In recent years, this technology has made great breakthroughs in graphene single crystal preparation and fold control. However, there are still some bottlenecks to be solved in order to truly realize the industrial preparation of graphene films. Firstly, the controllable preparation technology of graphene films still needs to be improved. Experimental studies tend to idealize the conditions, while industrial preparation faces more complicated conditions. Therefore, it is necessary to consider the factors such as impurities and contamination in the preparation of graphene films in order to improve the reliability and repeatability of the preparation results. Secondly, the efficiency and cost of industrial preparation should be considered, so the production equipment and process should be optimized. In addition, graphene film grown on copper substrate needs to be transferred to the target substrate for subsequent applications, and the introduction of transfer process is the biggest bottleneck in the current graphene film production, which will not only lead to the damage and contamination of graphene, but also greatly increase the production cost. In this report, the above problems are discussed in combination with the research results of our group in recent years, including the influence of non-ideal factors on the growth process of graphene, the control of the number of layers of graphene, growth of oriented graphene domains on the high index copper surface, the efficient preparation of large-area graphene films by a breath CVD method, and new graphene film transfer methods.

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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