凯发

The absence of a sizeable band gap in graphene synthesized by present technologies and experimental challenges originating from the intrinsic nature and extrinsic degradation of graphene have been impeding further developments in envisioned carbon-based electronics. Here, we first demonstrate an intrinsic monolayer-graphene semiconductor hydrogenated by remote plasma and its field-effect transistor showing an on/off current ratio over 103 at room temperature. We show that a band gap can be tuned as wide as 3.8 eV by varying hydrogen coverage. Furthermore, the gap modulation is reversible owing to the non-destructive nature of our method of hydrogenation, which preserves the structural integrity of the original graphene. Our new band-gap engineering protocol for hydrogenated graphene will play a critical role in realizing a broad range of novel applications encompassing integrated carbon electronics, optoelectronics, and photonics.