凯发

Grapheneis a promising candidate in analog electronics with projected operationfrequency well into the terahertz range. In contrast to the intrinsic cutofffrequency (fT) of 427 GHz,the maximum oscillation frequency (fmax)of graphene device still remains at low level, which severely limits itsapplication in radio frequency amplifiers. Here, we develop a novel transfermethod for chemical vapor deposition graphene, which can prevent graphene fromorganic contamination during the fabrication process of the devices. Thismethed maintains ideally compatible with wet-etching self-aligned process andT-type gate, by which the parasitical effect could berestrained.As a result，asmall parasiticresistance of 105 Ωμm is achieved and a clear saturation current of the devices is observed. Particularly, fmax of 106 GHz and 200 GHzbefore and after de-embedding respectively outperforms any GFET reported todata. We wish the approach we proposed here will pave the way to graphene basedRF device.