凯发

A lot of synthetic methods have been developed for the synthesis of graphene and related two-dimensional atomic-thick materials. These methods possess their own advantages and disadvantages in term of quality and quantity. Among them, chemical vapor deposition (CVD) has been recognized as a promising one since it combines high quality and large quantity of the product.  For the application of these materials in electronic devices, the final goal for the control synthesis is to get large-size, single-crystal and monolayer (or the number of layers can be controlled) thin film. A typical CVD process has two basic stages, nucleation and growth, in which the randomly distributed nuclei would continue to grow and eventually merge into film. Compared with the thin film composed of numerous grain boundaries, the single-crystal domain is more important for electronic applications and could exhibit more outstanding device performance due to the absence of defects.

Here, I will report the controllable synthesis of high quality graphene/boron nitride by CVD, their application in electronic devices and investigation of their properties are also involved.