凯发

Two-dimensional materials hold the promise for future atomically thin electronics and optoelectronics due to thepronounced influence of surface states and interactions,quantum confinement, and heterogeneity in the form ofvacancies, structural disorder, and substitutional dopants. Here we reported the recent progress in the synthesis of GaSe monolayer on different 2D materials through van der Waals epitaxial process, as well as their structure and optoelectronic properties. First, we will discuss the edge controlled growth kinetics of GaSe monolayer on SiO2 substrate through the in situ growth and etch process. Second, we will describe how the 2D template materials, including graphene and MoSe2 influence the stacking and orientation of GaSeepilayers through a van der Waals epitaxial process. Third, we will examine the optoelectronic and electrical properties such as rectifying behavior, persistent photoconductivity, and photovoltaics in 2D bilayer heterostructures. 

Research sponsored by the U.S. Dept. of Energy, Office of Science, Basic Energy Sciences, Materials Scienceand Engineering Div. (synthesis science) and Scientific User Facilities Div. (characterization science).