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Speaker-Gemma Rius

Gemma Rius
IMB-CNM-CSIC, Spain
Graduated in Physics by the UniversitatAutònoma de Barcelona, UAB (Spain), from 2002 to 2008 Gemma Rius was a nanolithography engineer at the National Centre of Microelectronics (IMB-CNM-CSIC), in Barcelona, Spain, and Ph.D. student on nanofabrication and integration of nanocarbon electronic devices and silicon nanomechanical devices at its Nanofabrication and NEMS Group. 
As a postdoctoral researcher in Japan, she has been at Tohoku University (Sendai) and Toyota Technological Institute (Nagoya), and three years at Nagoya Institute of Technology (Nagoya) as Assistant Professor.
From December 2015, Dr. Rius is back at the IMB-CNM-CSIC as a MarieCurie postdoctoral researcher. Her project challenges to develop graphene single digit-nanometer patterning for functional structures and operational devices; as well as other on-campus graphene-based projects. In parallel, she leads and runs several international collaborations and projects, focused on the advance of micro/nanofabrication technologies and applications, which apply hybrid- and hetero-structured (nano)materials such as carbon nanofiber probes, ZnO thin films and nanowires, etc. 
Dr. Rius is author of more than 50 articles and some other several book chapters or reviews on carbon nanomaterials as well asnanotechnologies. She is referee for several journals and project proposal reviewer for the NSF and EU Comission, e.g. Eurostars Program. 
She has been involved in high education as assistant professor both in Spain (pre-doc) and Japan (post-doc), at the UPC, UAB, TTI, NITech. Currently, she continues to be involved on education and supervises both undergraduate and graduate students within Nanoscience and Nanotechnology studies of the UAB, as well as international exchanges.
Title:Conventional and alternative approaches to produce graphene and develop electronics applications
SymposiumA2 Optoelectronic Devices
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Abstract

In this talk, several of our works for the synthesis and device technology on graphene will be presented. Epitaxial graphene on SiC is available for instance as 1) full coverage, 2) isolated flakes and 3) selectively grown material, as well as combined with device fabrication methods such as ion implantation for gating or local anodic oxidation by atomic force microscope for device resistance tuning. Plasma enhanced (PE) chemical vapor deposition (CVD) of porous vertically oriented graphene sheets has been applied to supercapacitor devices and Li-ion batteries. Alternative methods such as graphitization of ultrathin diamond-like carbon membranes patterned by focused ion beam induced deposition can be also introduced. Additional works such as wafer scale integration of transistors based on CVD graphene for biomedical applications or single wall carbon nanotubes for sensing will be shown as examples of the capability of the CNM-CSIC for fabrication of micro/nanoelectronic devices and systems.

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E-mail: meeting@c-gia.org

Abstract: Minyang Lu

Sponsor: Wenyang Yang

Media: Liping Wang

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