Mindaugas LukosiusInnovations for High Performance Microelectronics (IHP), Germany
Dr. Mindaugas Lukosius received M.Sc degree in Inorganic Chemistry in 2006 from the University of Vilnius, Lithuania. The Ph.D degree in Chemistry was obtained from the Carl von Ossietzky University Oldenburg,Germany in 2010, in the field of CVD depositions and developments of high-k MIM capacitors. Since 2006 he has been with the IHP where, in 2012, he joined the group of graphene research and is currently leading several projects of graphene synthesis by CVD as well as the integration of novel graphene modules into the BiCMOS technology. He authored and co-authored more than 50 peer-reviewed journal papers and held ~40 talks on national and international conferences.
Title：Graphene Base Transistor for High Frequency Applications: Challenges in wafer-scale integration
SymposiumHigh-frequency Electrics
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Abstract
The Graphene base transistor (GBT), belonging to the device group of hot electron transistors, promises high frequency potential up to the Terahertz regime due to the use of graphene as highly conducting, ultimate scaled base electrode. Furthermore, high power applications are feasible in case dielectric layers with high breakdown voltages can be integrated into the GBT devices. The talk will outline current challenges in 8” Si wafer scale integration of GBTs with respect to Si CMOS compatible approaches (e.g. deposition of dielectric layers on graphene, metal contact formation and graphene synthesis on Germanium).
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