Title:Controllable Growth of Single-crystal Graphene Domains by Chemistry Vapor Deposition
SymposiumGrowth of Large-Size Single-Crystal Graphene Domains
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Abstract
The final goal for the control synthesis of graphene is to get large-size, single-crystal and monolayer (or the number of layers can be controlled) graphene. For this end, a lot of synthetic methods have been developed. Among them, chemical vapor deposition (CVD) has been recognized as a promising one since it combines high quality and large quantity of the product. A typical CVD process of graphene synthesis processes two basic stages, nucleation and growth, in which the randomly distributed graphene nuclei would continue to grow and eventually merge into film. Compared with the graphene film composed of numerous grain boundaries, single-crystal graphene domain is more important for electronic applications and could exhibit more outstanding device performance due to the absence of defects.
Here, I report the controllable synthesis of graphene by CVD and investigation of its electronic properties.[1-15] A large scale synthesis of equiangular hexagon-shaped single or multilayer graphene by methane CVD on solid Cu surface at ambient pressure. A new method of using liquid Cu as a catalyst to synthesize graphene flakes and uniform film was developed (Figure 1). The liquid characteristic of the liquid Cu allows the control of graphene nucleation due to the less grain boundary comparing to solid Cu surface, thus leads to large single-crystal graphene domains. The single-layered and single-crystalline graphene flakes with highly regular and hexagonal symmetric patterns can be grown on a liquid copper surface (Figure 2).
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