Guqiao DingShanghai Institute of Microsystem and Information Technology, CAS, China
Guqiao Ding is a researcher in Shanghai Institute of Microsystem and Information Technology, CAS. He obtained his PhD in Shanghai Jiao Tong University in 2006. After that he worked as a Research Specialist in Dow Chemical China for more than 2 years, and as an Assistant Researcher in Chang Zhou University for 1 year. Since Sep. of 2009, he is an Assistant Professor in Shanghai Institute of Microsystem and Information Technology, CAS.
His interest is the research and development of new materials, especially graphene and other carbon materials. He has finished pilot production of 1-5 atomic layer graphene and graphene nanosheets. He has co-authored 51 journal papers, and applied over 50 patents with 16 authorized ones. In the future, he will still focus on the graphene production with innovative techniques and the graphene applications.
Title：Fabrication and Application of Graphene Quantum Dots
SymposiumFundamental of Graphene, other 2D materials and Related Devices
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Abstract
Recently, owing to the high stability and biocompatibility, carbon dots, especially sp2-bonded graphene quantum dots (GQDs), become new-generation photoluminescence materials, and have the potential for replacing commonly used fluorescent dyes and semiconducting quantum dots. [1,2] Nevertheless, the application of GQDs is still limited because of the relatively low quantum yield and limited wavelength. Tremendous efforts have been made to synthetic GQDs and other carbon dots with high quantum yields, such as surface passivation and chemical modification.[3] So far, the highest quantum yield is 0.62 for surface-modified carbon dots and 0.49 for surface-passivated GQDs, respectively. It is still much lower than that of fluorescent dyes or semiconductor quantum dots. What's more, the photoluminescence mechanism of GQDs is complicated and controversial. It is still unclear how to improve of quantum yield since size effect, defects and surface modification etc. were reported to be key factors for photoluminescence of GQDs. we report the synthesis of 1-3 nm N doped GQDs (N-GQDs) with higher quantum yield (0.74) than some fluorescent dyes via cutting graphene oxide and in situ doping progress without further surface passivation or modification. The key factor that affects the photoluminescence intensity was experimentally demonstrated to be the n-π* transition between the N in aromatic ring and conjugate structure of graphene. The strong fluorescence in solid state, good stability, excellent anti-jamming performance, as well as biolabeling agent for HeLa cells, confirm the advantages over the traditional fluorescent dyes. We will further present newest results on the photoluminescence wavelength control and usage of GQDs on the aqueous dispersion of graphene powders.
Reference:
[1] X. Yan, X. Cui, L. Li, J. Am. Chem. Soc.2010, 132, 5944-5945
[2] S. Yang, J. Sun, X. Li, W. Zhou, Z. Wang, P. He, G. Ding, X. Xie, M. Jiang, J. Mater. Chem. A. 2014, DOI: 10.1039/c4ta00860j.
[3] H. Li, X. He, Z. Kang, H. Huang, Y. Liu, J. Liu, S. Lian, C. H. A. Tsang, X. Yang, S. Lee, Angew. Chem. Int. Ed. 2010, 49, 4430-4444.
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