凯发

Abstract:
Two-dimensional field-effect transistor (2D-FET) sensors are one of the frontier research fields of advanced sensing technologies. These materials have large surface area and ultra-thin thickness approaching the physical limit, which give rise to remarkably enhanced sensitivities. On the other hand, all of the electron processes take place at the material surface or interfaces. The interfaces will largely influence the performances. Thus, the interfacial modulation is an important scientific question. This research is focused on the interfacial modulation of the graphene-based 2D-FET sensors. Main results include: new methods are developed to controllably produce high quality 2D sensing materials and the interfaces of the graphene-based 2D-FET sensors; new mechanisms such as giant photoelectrical-gating effect, controllable charge doping at the sensing interface, etc. are developed to modulate the electron processes at the sensing interface, which improves photoelectrical or chemical sensing performances of graphene-based 2D-FET sensors; finally, graphene-based 2D-FET sensors are applied in rapid detection of biomarkers, such as antibodies, antigens, nucleic acids and so on, realizing the applications in COVID-19 or other disease diagnoses.